Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
US7771623B2 · kind B2 · utility
6Cited by
14References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2006 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | May 31, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention is directed to a thick film conductor composition comprised of (a) aluminum-containing powder; (b) at least one glass frit composition; dispersed in (c) organic medium wherein said glass frit composition upon firing undergoes a recrystallization process and liberates both a glass and a crystalline phase and wherein said glass phase of said recrystallization process comprises a glass that has a lower softening point than the original softening point of said glass frit composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.