Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
US7772021B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Jun 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.