Methods of forming phase-changeable memory devices using growth-enhancing and growth-inhibiting layers for phase-changeable materials
US7772067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2008 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Jul 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
Abstract
Methods of forming phase-changeable memory devices include techniques to inhibit void formation in phase-changeable materials in order to increase device reliability. These techniques to inhibit void formation use an electrically insulating growth-inhibiting layer to guide the formation of a phase-changeable material region within a memory cell (e.g., PRAM cell). In particular, methods of forming an integrated circuit memory device include forming an interlayer insulating layer having an opening therein, on a substrate, and then lining sidewalls of the opening with a seed layer (i.e., growth-enhancing layer) that supports growth of a phase-changeable material thereon. An electrically insulating growth-inhibiting layer is then selectively formed on a portion of the interlayer insulating layer surrounding the opening. The formation of the growth-inhibiting layer is followed by a step to selectively grow a phase-changeable material region in the opening, but not on the growth-inhibiting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.