Solid electrolyte memory element and method for fabricating such a memory element
US7772614B2 · kind B2 · utility
3Cited by
19References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 16, 2006 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Oct 22, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A solid electrolyte memory element comprising an inert cathode electrode, a reactive anode electrode and a solid electrolyte layer disposed between the inert cathode electrode and the reactive anode electrode, wherein the solid electrolyte layer comprises a solid electrolyte matrix having defect sites.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.