Image sensor having an RPO layer containing nitrogen
US7772625B2 · kind B2 · utility
1Cited by
2References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2006 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Apr 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
Abstract
A semiconductor structure includes a transistor formed over a substrate. The transistor includes a transistor gate and at least one source/drain region. The semiconductor structure includes a pre-determined region coupled to the transistor. The semiconductor structure further includes a resist protection oxide (RPO) layer formed over the pre-determined region, wherein the RPO layer has a level of nitrogen of about 0.35 atomic % or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.