Image sensor with photosensitive thin film transistors
US7773139B2 · kind B2 · utility
14Cited by
187References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2004 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | May 10, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor array includes image sensors having photo TFTs to generate photocurrent in response to received images. The photo TFTs each have their respective gate electrodes and source electrodes independently biased to reduce the effects of dark current. Storage capacitors are coupled to each photo TFT and discharged upon generation of a photocurrent. Each storage capacitor is coupled to a readout TFT that passes a current from the storage capacitor to a data line. The photo TFT may be disposed above the storage capacitor to increase the exposed surface area of the photo TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.