Method of manufacturing capacitor
US7773364B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Nov 8, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
One capacitor fabrication process including metal layer forming a metal layer on one surface of a substrate, dielectric layer forming a dielectric layer on the metal layer, metal foil forming a metal foil on the dielectric layer, separating the noble metal layer from the dielectric layer, and electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of the dielectric layer with the metal foil. Another capacitor fabrication process includes separation layer forming a separation layer on one surface of a substrate, dielectric layer forming a dielectric layer on the separation layer, metal foil forming a metal foil the dielectric layer, separating the substrate from the separation layer, and an electrode layer forming an electrode layer on the second surface of the dielectric layer, wherein the second surface faces away from the first surface of said dielectric layer with the metal foil. A thin-film capacitor has higher capacity, is so slimmed down and has a form well fit for being buried in a base board, and can be used even at high frequencies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.