Writing method and system for a phase change memory
US7773409B2 · kind B2 · utility
7Cited by
7References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Mar 12, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0078
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A writing method for a phase change memory is disclosed. The writing method inputs a first writing pulse signal to a phase change memory to heat the phase change memory to above a first temperature and inputting a second writing pulse signal to the phase change memory to keep the phase change memory at a second temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.