Nonvolatile semiconductor memory having suitable crystal orientation
US7773428B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 12, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | Feb 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/696
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An NMOS transistor type nonvolatile semiconductor memory has first and second N-type diffusion layers formed in a P-type silicon layer as a source and a drain; a gate electrode formed on a channel region with an insulating film interposed therebetween, the channel region being sandwiched between the first and second N-type diffusion layers; and a charge storage layer formed in the insulating film. A direction from the first N-type diffusion layer to the second N-type diffusion layer is the same as a crystal orientation <100> of the P-type silicon layer. At the time of rewriting, the hot holes go over a potential barrier of the insulating film to be injected into the charge storage layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.