Nitride semiconductor laser element
US7773650B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2007 |
| Grant date | Aug 10, 2010 |
| Priority date | — |
| Expiry date | May 17, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride semiconductor laser element comprises a substrate, a nitride semiconductor layer that is laminated on the substrate and that has a ridge on its surface, and an electrode that is electrically connected with the nitride semiconductor layer, wherein there is provided an insulating protective film produced by forming a monocrystalline first film or a first film containing hexagonal crystals, and extending from the side faces of the ridge to the nitride semiconductor layer on both sides of the ridge, and a second film containing a polycrystalline or amorphous substance, from the nitride semiconductor layer side, in this order.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.