Method of producing thin films of compound I-III-VI, promoting the incorporation of III elements in the film
US7776203B2 · kind B2 · utility
3Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Dec 23, 2003 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Nov 12, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method of producing thin films of compound CIGS by means of electrodeposition. According to the invention, a surface-active compound, such as dodecyl sodium sulphate, is added to an electrolysis bath solution in order to promote the incorporation of gallium in the CIGS films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.