Thin film transistor array panel and method of manufacture
US7776633B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2007 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Sep 7, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A method of manufacturing a thin film transistor array panel, including: forming gate lines on a substrate; forming a gate insulating layer on the gate lines; forming semiconductor layers on the gate insulating layer; forming data lines and drain electrodes on the semiconductor layers; depositing a passivation layer on the data lines and the drain electrodes; forming a first photoresist layer including a first portion and a second portion that is thinner than the first portion on the passivation layer; forming a first preliminary contact hole exposing the data lines by etching the passivation layer by using the first photoresist layer as a mask; removing the second portion of the first photoresist; forming a first contact hole by expanding the first preliminary contact hole and opening portions by etching the passivation layer by using the first portion of the first photoresist layer as a mask; depositing a conductor layer; and forming pixel electrodes in the opening portions and a first contact assistant member in the first contact hole by removing the first photoresist layer and the conductor layer located thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.