Patent · US Active

Semiconductor laser with a weakly coupled grating

US7776634B2 · kind B2 · utility

4Cited by

19References

4Claims

0Family size

Assignee

Nanoplus Ltd. · JP

Inventors

Johann Peter Reithmaier · Kassel, DE
Lars Bach · Ullersdorf, DE

Key dates

Filing date	Nov 5, 2008
Grant date	Aug 17, 2010
Priority date	—
Expiry date	Nov 5, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/22
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor laser with a semiconductor substrate, a laser layer arranged on the semiconductor substrate, a waveguide arranged parallel to the laser layer and a strip shaped grating structure is disclosed. The laser layer, the waveguide and the grating are arranged in a configuration which results in weak coupling between the laser light and the grating structure, so that the laser light interacts with an increased number of grating elements. A process for the production of such a semiconductor laser is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.