Phase change memory cell and method and system for forming the same
US7776644B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Nov 10, 2006 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Oct 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
For fabricating a phase change memory cell, a layer of phase change material and a layer of a first electrode material are deposited. In addition, the first electrode material is patterned using an etchant including a low-reactivity halogen element such as bromine or iodine to form a first electrode. By using the low-reactivity halogen element, change to the composition of the phase change material and formation of undercut and deleterious halogen by-product are avoided.
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