Patent · US Active

Pixel interconnect insulators and methods thereof

US7777186B2 · kind B2 · utility

4Cited by
21References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 14, 2008
Grant dateAug 17, 2010
Priority date
Expiry dateOct 11, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F39/809
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

According to one embodiment, an infrared focal plane comprises an array of pixels configured to detect optical radiation in a predetermined radiation band are positioned on a support substrate. The pixels are connected to pixel contacts on a read-out integrated circuit via pixel interconnects comprising bonding bumps. According to some embodiments, indium migration is blocked by a patterned electrical insulator comprising a plurality of intersecting walls defining a plurality of cells that surround each pixel interconnect. The patterned electrical insulator may be dimensioned such that it does not physically contact the support substrate, the array of pixels or pixel interconnects. In this manner, pixel-pair defects due to indium migration resulting from cryogenic thermal-cycling may be prevented, thereby extending the thermal-cycling lifetime of the focal plane array.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.