Phase change memory device with a novel electrode
US7777214B2 · kind B2 · utility
5Cited by
3References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2009 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Jan 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase change memory device and a method of forming the same include a conductive pattern formed on a substrate. A lower electrode contact is disposed on the conductive pattern. The phase change pattern is disposed on the lower electrode contact. An upper electrode is disposed on the phase change pattern. An area of an upper surface of the lower electrode contact is smaller than an area of a lower surface of the lower electrode contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.