Thin film transistor and method for fabricating same

US7777231B2 · kind B2 · utility

Assignee

• Au Optronics Corporation · TW

Inventors

• Feng-Yuan Gan · Baoshan, TW
• Han-Tu Lin · Zhuolan Township, TW

Key dates

• Filing date: Apr 29, 2009
• Grant date: Aug 17, 2010
• Expiry date: May 1, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6739

Abstract

A method for forming a thin film transistor on a substrate is disclosed. A gate electrode and a gate insulation layer are disposed on a surface of the substrate. A deposition process is performed by utilizing hydrogen diluted silane to form a silicon-contained thin film on the gate insulation layer first. A hydrogen plasma etching process is thereafter performed. The deposition process and the etching process are repeated for at least one time to form an interface layer. Finally, an amorphous silicon layer, n+ doped Si layers, a source electrode, and a drain electrode are formed on the interface layer.