Normally-off field-effect semiconductor device
US7777254B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 9, 2008 |
| Grant date | Aug 17, 2010 |
| Priority date | — |
| Expiry date | Jun 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
After creating an electron transit layer on a substrate, a baffle is formed on midpart of the surface of the electron transit layer, the surface having a pair of spaced-apart parts left on both sides of the baffle. A semiconducting material different from that of the electron transit layer is deposited on its surface thereby conjointly fabricating an electron supply layer grown continuously on the pair of spaced-apart parts of the electron transit layer surface, and a discontinuous growth layer on the baffle in the midpart of the electron transit layer surface. When no voltage is being impressed to the gate electrode on the discontinuous growth layer, this layer creates a hiatus in the two-dimensional electron gas layer generated along the heterojunction between the electron supply layer and electron transit layer. The hiatus is closed upon voltage application to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.