Integrated circuits having photonic interconnect layers and methods for fabricating same

US7778501B2 · kind B2 · utility

Assignee

• HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

• Raymond G. Beausoleil · Redmond, US
• Scott W. Corzine · Sunnyvale, US
• Sean Spillane · Bozeman, US
• Wei Wu · Palo Alto, US
• R. Stanley Williams · Portola Valley, US

Key dates

• Filing date: Apr 3, 2007
• Grant date: Aug 17, 2010
• Expiry date: Apr 3, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/50
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Various embodiments of the present invention are directed to integrated circuits having photonic interconnect layers and methods for fabricating the integrated circuits. In one embodiment of the present invention, an integrated circuit comprises an electronic device layer and one or more photonic interconnect layers. The electronic device layer includes one or more electronic devices, and the electronic device layer is attached to a surface of an intermediate layer. One of the photonic interconnect layers is attached to an opposing surface of the intermediate layer, and each of the photonic interconnect layers has at least one photonic device in communication with at least one of the electronic devices of the electronic device layer.