High-frequency substrate and production method therefor
US7780877B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 5, 2006 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Dec 5, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31699
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The high-frequency substrate is constructed of a base member and a conductor adhered to the base member, and the base member is composed of a polymer which is a fluoropolymer having a conductor-affinitive monomer graftpolymerized at a grafting percentage of 1% or less by weight. After reactive sites necessary for graftpolymerization are formed on a film of a fluoropolymer under an oxygen-free atmosphere by irradiating the film with an electron beam or the like, the fluoropolymer film is introduced into a solution of a conductor-affinitive monomer so as to cause graftpolymerization, and a conductor is adhered thereto to thereby produce a substrate, with a grafting percentage of the monomer to the fluoropolymer being 1% or less by weight in the graftpolymerization. The technique leads to the production of a high-frequency substrate having superior adhesion force with respect to the conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.