Infrared sensor manufacturing method suitable for mass production
US7781030B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 27, 2007 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Jun 25, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/20
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.