Method to fabricate semiconductor optical device
US7781245B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2009 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Jan 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A process for the semiconductor laser diode is disclosed, which prevents the abnormal growth occurred at the second growth for the burying region of the buried hetero structure. The ICP (Induction-Coupled Plasma) CVD apparatus forms a silicon oxide file with a thickness of above 2 μm as adjusting the bias power PBIAS. Patterning the silicon oxide mask and dry-etching the semiconductor layers, a mesa structure including the active layer may be formed. As leaving the patterned silicon oxide film, the second growth for the burying region buries the mesa structure. The residual stress of the silicon oxide film is −250 to −150 MPa at a room temperature, while, it is −200 to 100 MPa at temperatures from 500 to 700° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.