Patent · US Active

Method for producing an integrated circuit including a semiconductor

US7781294B2 · kind B2 · utility

22Cited by

3References

26Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Anton Mauder · Kolbermoor, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Jul 31, 2007
Grant date	Aug 24, 2010
Priority date	—
Expiry date	Nov 9, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/53
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing an integrated circuit including a semiconductor is disclosed. In one embodiment, crystal defects are produced by irradiation in the material of the underlying semiconductor substrate which crystal defects form an inhomogeneous crystal defect density distribution in the vertical direction of the semiconductor component and lead to a corresponding inhomogeneous distribution of the carrier lifetime.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.