Method for manufacturing SOI substrate
US7781308B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 25, 2008 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Nov 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0323
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A second single crystal semiconductor film is formed over a first single crystal semiconductor film; a separation layer is formed by addition of ions into the second single crystal semiconductor film; a second insulating film functioning as a bonding layer is formed over the second single crystal semiconductor film; a surface of a first SOI substrate and a surface of a second substrate are made to face each other, so that a surface of the second insulating film and the surface of the second substrate are bonded to each other; and then heat treatment is performed to cause cleavage at the separation layer, so that a second SOI substrate in which a part of the second single crystal semiconductor film is provided over the second substrate with the second insulating film interposed therebetween is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.