Semiconductor light emitting device and method of manufacturing the same employing nanowires and a phosphor film
US7781778B2 · kind B2 · utility
34Cited by
3References
7Claims
0Family size
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Key dates
| Filing date | Sep 5, 2007 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Dec 4, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/939
Abstract
There are provided a semiconductor light emitting device using a phosphor film formed on a nanowire structure and a method of manufacturing the device, the device including: a substrate; a light emitting structure including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer sequentially formed on the substrate; a plurality of nanowire structures formed on the light emitting structure and formed of a transparent material; and a phosphor film formed on at least an upper surface and a side surface of each of the plurality of nanowire structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.