Light emitting diodes with smooth surface for reflective electrode
US7781780B2 · kind B2 · utility
4Cited by
11References
19Claims
0Family size
Assignee
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Key dates
| Filing date | May 13, 2008 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | May 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.