Semiconductor device having a heterojunction diode and manufacturing method thereof
US7781786B2 · kind B2 · utility
24Cited by
15References
15Claims
0Family size
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Key dates
| Filing date | Apr 10, 2007 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Apr 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/106
Abstract
Impurity concentration of a second semiconductor region is set such that when a predetermined reverse bias is applied to a heterojunction diode configured by a first semiconductor region and the second semiconductor region, a breakdown voltage at least in a heterojunction region other than outer peripheral ends of the heterojunction diode is a breakdown voltage of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.