Nitride semiconductor laser element
US7781796B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2007 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Sep 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride semiconductor laser element includes a substrate and a nitride semiconductor layer in which a first semiconductor layer, an active layer, and a second semiconductor layer are laminated in this order on the substrate. At least one of the first semiconductor layer and the second semiconductor layer includes a first section forming recessed and raised portions and a second section embedding the recessed and raised portions of the first section. A region with a higher aluminum mixed crystal ratio than the second section that embeds the recessed and raised portions is disposed on top faces of the raised portions. The nitride semiconductor layer defines resonant planes, and the recessed and raised portions are formed in a shape of stripes that extend substantially parallel to the resonant planes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.