Semiconductor device and manufacturing method of same
US7781894B2 · kind B2 · utility
14Cited by
6References
8Claims
0Family size
Assignees
Inventor
Key dates
| Filing date | Dec 6, 2006 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Feb 6, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The characteristic of the semiconductor device of this invention is that the device has a piercing hole 10 formed in the semiconductor layer to touch a first metal film 18, a insulating film 12 formed on the side wall of the piercing hole 10, a second metal film 13 disposed on the first metal film 18 at the bottom of the piercing hole 10 where the insulating film 12 has not been formed and on the semiconductor layer, a barrier metal film 14 formed on the insulating film 12 in the piercing hole 10 and on the first metal film 18, and a wiring layer 15 formed inside the piercing hole 10 through the barrier metal film 14.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.