Gate drive for wide bandgap semiconductor device
US7782118B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2007 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Oct 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate drive circuit for a wide bandgap semiconductor junction gated transistor includes a gate current limit resistor. The gate current limit resistor is coupled to a gate input of the wide bandgap semiconductor junction gated transistor when in use and limits a gate current provided to the gate input of the junction gated transistor. An AC-coupled charging capacitor is also included in the gate drive circuit. The AC-coupled charging capacitor is coupled to the gate input of the wide bandgap semiconductor junction gated transistor when in use and is positioned parallel to the gate current limit resistor. A diode is coupled to the gate current limit resistor and the AC-coupled charging capacitor on one end and an output of a gate drive chip on the other end When in use, the diode lowers a gate voltage output from the gate drive chip applied to the gate input of the wide bandgap semiconductor junction gated transistor through the gate current limit resistor. The gate drive circuitry provides a small, efficient, and cost effective control circuitry for a wide bandgap semiconductor junction gated transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.