Alignment method and apparatus of mask pattern
US7782441B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2008 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Oct 15, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F9/7003
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An alignment method of mask patterns includes forming a first layer by transferring a first mask pattern onto a wafer, forming a second layer by transferring a second mask pattern onto the first layer, and particularly a first alignment step, forming the first layer, which performs alignment for minimizing offset between a center position of the wafer and a center position of the first mask pattern and a residual rotation error between the wafer and the first mask pattern and additional alignment for compensating an amount of possible deviation of superposition of the second layer pattern on the first layer pattern, and a second alignment step, forming the second layer, which performs only alignment for minimizing offset between a center position of the first layer pattern and a center position of the second mask pattern and a residual rotation error between the first layer pattern and the second mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.