Buried semiconductor laser and method for manufacturing the same
US7782919B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Dec 7, 2007 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Mar 28, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A buried semiconductor laser exhibiting a reduced dislocation of a contact layer is achieved. A buried semiconductor laser, comprising: an n-type indium phosphide (InP) substrate; an active layer disposed on the n-type InP substrate; block layers provided so as to bilaterally disposed on both sides of the active layer; a clad layer provided so as to cover the active layer and the block layers; and a p-type gallium indium arsenide (InGaAs) contact layer provided on the clad layer, wherein the p-type InGaAs contact layer has a compressive strain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.