Edge-emitting semiconductor laser with photonic-bandgap structure formed by intermixing
US7782920B2 · kind B2 · utility
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5References
10Claims
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Key dates
| Filing date | Dec 8, 2008 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Feb 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A separate-confinement heterostructure, edge-emitting semiconductor laser having a wide emitter width has elongated spaced apart intermixed and disordered zones extending through and alongside the emitter parallel to the emission direction of the emitter. The intermixed zones inhibit lasing of high order modes. This limits the slow axis divergence of a beam emitted by the laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.