Thickness variation detector of photoconductor, image formation unit, image formation apparatus and method for thickness variation of photoconductor
US7783212B2 · kind B2 · utility
4Cited by
5References
11Claims
0Family size
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Key dates
| Filing date | Jul 10, 2007 |
| Grant date | Aug 24, 2010 |
| Priority date | — |
| Expiry date | Sep 5, 2028 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G15/5037
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thickness variation detector of a photoconductor includes: a current detection unit that detects a value of current being used for charging a surface of the photoconductor in a state in which a charging unit is in contact with a surface of the photoconductor; and a thickness variation detection unit that detects a thickness variation along a rotation direction of the photoconductor based on the value of current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.