Method and apparatus for chemical mechanical polishing
US7785175B2 · kind B2 · utility
2Cited by
11References
9Claims
0Family size
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Key dates
| Filing date | May 20, 2005 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | May 20, 2025 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/042
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A polishing device is hermetically accommodated in a chamber containing an atmosphere having a composition different from the ambient air, so that the atmosphere around the polishing device is altered into the composition different from the ambient air, and voltage is applied between a wafer and a polishing pad to polish the wafer with an electrolytic effect. The polishing device has the atmosphere containing extremely less oxygen, preventing a surface of the wafer from oxidation and thereby providing a constant polishing rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.