Method of fabricating thin film transistor
US7785941B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 11, 2007 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Jul 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6743
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a thin film transistor (TFT) is provided. A substrate having a gate, a dielectric layer, a channel layer and an ohmic contact layer formed thereon is provided. Next, a metal layer is formed over the substrate covering the ohmic contact layer. Next, the metal layer and the ohmic contact layer are simultaneously etched by a wet etching process to form a source/drain and expose the channel layer. Because the wet etching process can be used to selectively etch the ohmic contact layer, damage to the underlying channel layer may be negligible. Thus, the reliability of the device may be promoted. Furthermore, the process may be simplified, the production yield and the throughput of TFT may be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.