Methods of employing a thin oxide mask for high dose implants
US7785974B2 · kind B2 · utility
3Cited by
15References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2006 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Dec 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a bipolar transistor device includes providing a semiconductor substrate. An oxide layer is formed on the semiconductor substrate. The oxide layer is patterned to form an opening that exposes a portion of the semiconductor substrate. A dopant, such as antimony, is implanted into the semiconductor substrate through the opening to form a buried layer. An upper portion of the mask layer is removed to define a thin mask layer. A buried layer diffusion process is performed to drive in the implanted dopants while mitigating recess formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.