Selective processing of semiconductor nanowires by polarized visible radiation

US7786024B2 · kind B2 · utility

Assignees

• NANOSYS, INC. · US
• The Regents of the University of California · US

Inventors

• David Stumbo · Belmont, US
• Yaoling Pan · Santa Clara, US
• Costas P. Grigoropoulos · Berkeley, US
• Nipun Misra · Berkeley, US

Key dates

• Filing date: Nov 7, 2007
• Grant date: Aug 31, 2010
• Expiry date: May 22, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods, systems, and apparatuses for annealing semiconductor nanowires and for fabricating electrical devices are provided. Nanowires are deposited on a substrate. A plurality of electrodes is formed. The nanowires are in electrical contact with the plurality of electrodes. The nanowires are doped. A polarized laser beam is applied to the nanowires to anneal at least a portion of the nanowires. The nanowires may be aligned substantially parallel to an axis. The laser beam may be polarized in various ways to modify absorption of radiation of the applied laser beam by the nanowires. For example, the laser beam may be polarized in a direction substantially parallel to the axis or substantially perpendicular to the axis to enable different nanowire absorption profiles.