Thin-film transistor and display device
US7786485B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2009 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Feb 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.