Semiconductor device and manufacturing method thereof
US7786487B2 · kind B2 · utility
0Cited by
8References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 10, 2004 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Nov 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed is a semiconductor device including a SiC substrate and a heat conductor formed in a hole in the SiC substrate and made of a linear structure of carbon elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.