Tunable dielectric radio frequency microelectromechanical system capacitive switch
US7786820B2 · kind B2 · utility
4Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2006 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Mar 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H2001/0052
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention is a tunable RF MEMS switch developed with a BST dielectric at the contact interface. BST has a very high dielectric constant (>300) making it very appealing for RF MEMS capacitive switches. The tunable dielectric constant of BST provides a possibility of making linearly tunable MEMS capacitive switches. The capacitive tunable RF MEMS switch with a BST dielectric is disclosed showing its characterization and properties up to 40 GHz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.