Semiconductor apparatus using back-side high-withstand-voltage integrated circuit
US7787225B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 12, 2007 |
| Grant date | Aug 31, 2010 |
| Priority date | — |
| Expiry date | Jul 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
A semiconductor apparatus includes an electroconductive member; a switching device electrically connected to the electroconductive member on the electroconductive member and having a withstand voltage between a front side and a back side as a first withstand voltage; a back-side high-withstand-voltage integrated circuit provided on the electroconductive member separately from the switching device, incorporating a control circuit for controlling turning-on/off of the switching device, and having a withstand voltage between a front side and a back side as a second withstand voltage higher than the first withstand voltage; an insulating substrate provided on the electroconductive member separately from the switching device and the back-side high-withstand-voltage integrated circuit; input/output wiring connected to the insulating substrate; first wiring connecting the insulating substrate and the switching device; and second wiring connecting the insulating substrate and back-side high-withstand-voltage integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.