Condensation type polymer-containing anti-reflective coating for semiconductor
US7790356B2 · kind B2 · utility
5Cited by
8References
16Claims
0Family size
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Key dates
| Filing date | Apr 6, 2005 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Jan 10, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/952
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
There is provided an anti-reflective coating forming composition comprising a polymer having a pyrimidinetrione structure, imidazolidinedione structure, imidazolidinetrione structure or triazinetrione structure and a solvent. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, and can use in lithography process by use of a light having a short wavelength such as ArF excimer laser beam (wavelength 193 nm) or F2 excimer laser beam (wavelength 157 nm), etc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.