Method for fabricating photo sensor
US7790487B2 · kind B2 · utility
34Cited by
6References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2008 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Dec 4, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0231
Abstract
A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.