Construction of flash memory chips and circuits from ordered nanoparticles
US7790560B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 12, 2008 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Jun 23, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/936
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods, apparatus and systems form memory structures, such as flash memory structures from nanoparticles by providing a source of nanoparticles as a conductive layer. The particles are moved by application of a field, such as an electrical field, magnetic field and even electromagnetic radiation. The nanoparticles are deposited onto an insulating surface over a transistor in a first distribution of the nanoparticles. A field is applied to the nanoparticles on the surface that applies a force to the particles, rearranging the nanoparticles on the surface by the force from the field to form a second distribution of nanoparticles on the surface. A protective and enclosing insulating layer is deposited on the nanoparticle second distribution. The addition of a top conductive layer completes a basic flash memory structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.