Semiconductor on glass insulator made using improved thinning process
US7790565B2 · kind B2 · utility
3Cited by
7References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Feb 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30608
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to an ion implantation process to create an exfoliation layer in the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing at least one cleaved surface; and subjecting the at least one cleaved surface to a wet etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.