Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors
US7790589B2 · kind B2 · utility
3Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Apr 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating high-voltage semiconductor devices, the semiconductor devices and a mask for implanting dopants in a semiconductor are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.