Methods of manufacturing semiconductor devices including metal oxide layers
US7790591B2 · kind B2 · utility
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2References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 13, 2008 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Nov 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02178
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of manufacturing a semiconductor device are provided including forming a charge storage layer on a gate insulating layer that is on a semiconductor substrate. A blocking insulating layer is formed on the charge storage layer and an electrode layer is formed on the blocking insulating layer. The blocking insulating layer may be formed by forming a lower metal oxide layer at a first temperature and forming an upper metal oxide layer on the lower metal oxide layer at a second temperature, lower than the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.