Encapsulated silicidation for improved SiC processing and device yield
US7790616B2 · kind B2 · utility
5Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2007 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Jul 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a silicide contact. The method comprises the steps of depositing a metal on a SiC substrate; forming an encapsulating layer on deposited metal; and annealing said deposited metal to form a silicide contact. The encapsulating layer prevents agglomeration and formation of stringers during the annealing process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.