Atomic layer deposition of strontium oxide via N-propyltetramethyl cyclopentadiendyl precursor
US7790629B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 14, 2008 |
| Grant date | Sep 7, 2010 |
| Priority date | — |
| Expiry date | Apr 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02205
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of depositing oxide materials on a substrate is provided. A deposition chamber holds the substrate, where the substrate is at a specified temperature, and the chamber has a chamber pressure and wall temperature. A precursor molecule containing a cation material atom is provided to the chamber, where the precursor has a line temperature and a source temperature. An oxidant is provided to the chamber, where the oxidant has a source flow rate. Water is provided to the chamber, where the water has a source temperature. By alternating precursor pulses, the water and the oxidant are integrated with purges of the chamber to provide low contamination levels and high growth rates of oxide material on the substrate, where the pulses and the purge have durations and flow rates. A repeatable growth cycle includes pulsing the precursor, purging the chamber, pulsing the water, pulsing the oxidant, and purging the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.